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FK20UM-5 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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FK20UM-5 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 5 page  Feb.1999 — — — — 3 0.19 1.9 13.0 1400 280 55 25 50 150 65 1.5 — — ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 10A, VGS = 10V ID = 10A, VGS = 10V ID = 10A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50 Ω IS = 10A, VGS = 0V Channel to case IS = 20A, dis/dt = –100A/ µs V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr MITSUBISHI Nch POWER MOSFET FK20UM-5 HIGH-SPEED SWITCHING USE V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns 250 ±30 — — 2 — — 8.5 — — — — — — — — — — — — ±10 1 4 0.24 2.4 — — — — — — — — 2.0 0.83 150 200 160 120 80 40 0 200 150 100 50 0 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 23 5 7 101 100 23 5 7 102 23 5 7 103 TC = 25°C Single Pulse tw=10µs 100µs 1ms 10ms DC POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) ELECTRICAL CHARACTERISTICS (Tch = 25 °C) Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. PERFORMANCE CURVES |
Similar Part No. - FK20UM-5 |
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Similar Description - FK20UM-5 |
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