APTGF100A120T3AG

www.microsemi.com

5 – 5

Forward Characteristic of diode

0

25

50

75

100

125

00.511.522.533.5

ZCS

hard

switching

ZVS

0

30

60

90

120

150

180

20

40

60

80

100

120

140

D=50%

Operating Frequency vs Collector Current

maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.1

0.2

0.3

0.4

0.5

0.6

0.00001

0.0001

0.001

0.01

0.1

1

10

rectangular Pulse Duration (Seconds)

Diode

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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

and foreign patents. U.S and Foreign patents pending. All Rights Reserved.