Technical Note

9/10

BA6219BFP-Y, BA6222

www.rohm.com

2009.04 - Rev.A

○

c

2009 ROHM Co., Ltd. All rights reserved.

12) Regarding the input pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements, in order to keep them

isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example, the relation between each potential is as follows:

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, as well as operating malfunctions and physical damage. Therefore, do not use methods by

which parasitic diodes operate, such as applying a voltage lower than the GND (P substrate) voltage to an input pin.



Ordering part number

B

A

6

2

1

9

B

F

P

-

Y

-

E

2

ROHM part

number

Type

6219B

6222

Package

FP-Y: HSOP25

None: HSIP10

Packaging spec.

E2: Embossed taping

None: Container tube

Resistor

Transistor (NPN)

N

N

N

P

+

P

+

P

P substrate

GND

Parasitic element

Pin A

N

N

P

+

P

+

P

P substrate

GND

Parasitic element

Pin B

C

B

E

N

GND

Pin A

Pin B

Other adjacent elements

E

B

C

GND

Parasitic

element

Appendix: Example of monolithic IC structure

Parasitic

element