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VG36644041DT Datasheet(PDF) 47 Page - Vanguard International Semiconductor |
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VG36644041DT Datasheet(HTML) 47 Page - Vanguard International Semiconductor |
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47 / 69 page  Document :1G5-0177 Rev.2 Page 47 VIS VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Random Row Read (Interleaving Banks) (2 of 2) CLK CKE CS RAS CAS WE A10 ADD DQM DQ t CK3 Burs tLength=8, CAS Latency=3 Activate Bank B Command Read Hi-Z Command QAa0 QAa1 QBa1 QBa2 QBa3 QBa4 QBa5 QBa6 QBa7 Bank B Activate Command Bank A Precharge Command Bank B QBb0 QBa0 Read Command Bank B QAa3 QAa4 QAa5 QAa6 QAa7 QAa2 Read Command Bank A t RCD t AC3 t RP High Activate Bank B Command Precharge Command Bank A * BS1=”L”, Bank C,D = Idle *BS0 |
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