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VG3617161ET Datasheet(PDF) 42 Page - Vanguard International Semiconductor |
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VG3617161ET Datasheet(HTML) 42 Page - Vanguard International Semiconductor |
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42 / 69 page  Document:1G5-0189 Rev.1 Page 42 VIS VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Random Column Read (Page Within same Bank)(2 of 2) CLK CKE CS RAS CAS WE A11(BS) A10 A0~A9 DQM DQ t CK3 Burst Length=4, CAS Latency=3 Activate Bank A Command Read Hi-Z Activate Read Command Command RAa CAa RAa CAb CAc RAd CAd QAc2 QAc3 QAa0 QAa1 QAa2 QAa3 QAb0 QAb1 QAc0 QAc1 Bank A Read Command Bank A Precharge Command Bank A Bank A Command Bank A RAd Read Command Bank A |
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