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VG36128161A Datasheet(PDF) 51 Page - Vanguard International Semiconductor |
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VG36128161A Datasheet(HTML) 51 Page - Vanguard International Semiconductor |
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51 / 69 page  Document : 1G5-0154 Rev.1 Page 51 VIS VG36128401A Preliminary VG36128801A VG36128161A CMOS Synchronous Dynamic RAM T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22 Read and Write Cycle (2 of 2) CLK CKE CS RAS CAS WE BS A10 ADD DQM DQ t CK3 Burst Length=4, CAS Latency=3 Activate Bank A Command Read Hi-Z Command DAb3 QAc0 QAa0 QAa1 QAa2 QAa3 DAb0 DAb1 Bank A Write Command Bank A QAc3 QAc1 The Read Data The Write Data is Masked with a Zero Clock RAa Latency is Masked with a Two Clock Latency RAa CAb CAa CAc Read Command Bank A |
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