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VG26VS18165C Datasheet(PDF) 9 Page - Vanguard International Semiconductor

Part # VG26VS18165C
Description  1,048,576 x 16 - Bit CMOS Dynamic RAM
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Manufacturer  VML [Vanguard International Semiconductor]
Direct Link  http://www.vis.com.tw
Logo VML - Vanguard International Semiconductor

VG26VS18165C Datasheet(HTML) 9 Page - Vanguard International Semiconductor

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Document:1G5-0147
Rev.1
Page 9
VIS
VG26(V)(S)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
DC Characteristics ; 3.3 - Volt Version (Cont.)
(Ta = 0 to 70°C, VCC= +3.3V
%, VSS= 0V)
Notes:
1. ICC is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. ICC max is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. For ICC4, address can be changed once or less within one EDO page mode cycle time.
Parameter
Symbol
Test Conditions
VG26(V)(S)18165C
Unit
Notes
-5
-6
Min
Max
Min
Max
Input leakage current
ILI
+ 0.3V
-5
5
-5
5
Output leakage current
ILO
+ 0.3V
Dout = Disable
-5
5
-5
5
Output high Voltage
VOH
IOH = -2mA
2.4
-
2.4
-
V
Output low voltage
VOL
IOL = +2mA
-
0.4
-
0.4
V
10
±
0V
Vin
V
C C
µA
0V
Vout
V
CC
µA


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