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VG26VS17400E Datasheet(PDF) 5 Page - Vanguard International Semiconductor

Part No. VG26VS17400E
Description  4,194,304 x 4 - Bit CMOS Dynamic RAM
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Maker  VML [Vanguard International Semiconductor]
Homepage  http://www.vis.com.tw
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VG26VS17400E Datasheet(HTML) 5 Page - Vanguard International Semiconductor

 
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Document : 1G5-0142
Rev.1
Page 5
VIS
VG26(V)(S)17400E
4,194,304 x 4 - Bit
CMOS Dynamic RAM
Absolute Maximum Rating
Recommended DC Operating Conditions
Capacitance
Ta = 25°C, VCC =
% or
%, f = 1MHz
Note : 1. Capacitance measured with effective capacitance measuring method.
2. CAS = VIH to disable Dout.
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
5V
3.3V
VT
-1.0 to + 7.0
-0.5 to + 4.6
V
Supply voltage relative to Vss
5V
3.3V
Vcc
-1.0 to + 7.0
-0.5 to + 4.6
V
Short circuit output current
IOUT
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TOPT
0 to + 70
°C
Storage temperature
TSTG
-55 to + 125
°C
Parameter/Condition
Symbol
5 Volt Version
3.3 Volt Version
Unit
Min
Typ
Max
Min
Typ
Max
Supply Voltage
Vcc
4.5
5.0
5.5
3.0
3.3
3.6
V
Input High Voltage, all inputs
VIH
2.4
-
VCC + 1.0
2.0
-
VCC + 0.3
V
Input Low Voltage, all inputs
VIL
-1.0
-
0.8
-0.3
-
0.8
V
Parameter
Symbol
Typ
Max
Unit
Note
Input capacitance (Address)
Cl1
-
5
pF
1
Input capacitance
(RAS, CAS, OE, WE)
Cl2
-
7
pF
1
Output capacitance
(Data - in, Data - out)
CI/O
-
7
pF
1,2
5V 10
±
3.3V 10
±


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