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HA940 Datasheet(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

Part No. HA940
Description  PNP SILICON TRANSISTOR
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Maker  HUASHAN [SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD]
Homepage  http://www.huashan.com.cn
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HA940 Datasheet(HTML) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD

   
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Shantou Huashan Electronic Devices Co.,Ltd.
APPLICATIONS
Vertical Deflection Output Power Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
Characteristics
Min
Typ
Max
Unit
Test Conditions
BVCBO
Collector-Base Breakdown Voltage
-150
V
IC=-500μA, IE=0
BVCEO
Collector-Emitter Breakdown Voltage
-150
V
IC=-10mA, IB=0
BVEBO
Emitter-Base Breakdown Voltage
-5
V
IE=-500μA,IC=0
HFE
DC Current Gain
40
75
140
VCE=-10V, IC=-500mA
VCE(sat) Collector- Emitter Saturation Voltage
-1.5
V
IC=-500mA, IB=-50mA
VBE(ON) Base-Emitter On Voltage
-0.65 -0.75 -0.85
V
VCE=-10V, IC=-500mA
ICBO
Collector Cut-off Current
-10
μA
VCB=-120V, IE=0
IEBO
Emitter Cut-off Current
-10
μA
VEB=-5V, IC=0
fT
Current Gain-Bandwidth Product
4
MHz
VCE=-10V,IC=-500mA
Cob
Output Capacitance
55
pF
VCB=-10V, IE=0,f=1MHz
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature…………………………………150℃
PC——Collector Dissipation(Tc=25℃)……………………………25W
PC——Collector Dissipation(Ta=25℃)…………………………1.5W
VCBO——Collector-Base Voltage………………………………-150V
VCEO——Collector-Emitter Voltage……………………………-150V
VEBO——Emitter-Base Voltage………………………………-5V
IC——Collector Current……………………………………………-1.5A
Ib——Base Current………………………………………………-0.5A
1―Base,B
2―Collector,C
3―Emitter,E
TO-220
HA940
PNP SILICON TRANSISTOR


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