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SI9933ADY Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI9933ADY
Description  Dual P-Channel 20-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI9933ADY Datasheet(HTML) 2 Page - Vishay Siliconix

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Si9933ADY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2
Document Number: 70651
S-00652—Rev. B, 27-Mar-00
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–0.8
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –16 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –10 V, VGS = 0 V, TJ = 85_C
–3
mA
On-State Drain Currentb
ID(on)
VDS v –5 V, VGS = –4.5 V
–16
A
On-State Drain Currentb
ID(on)
VDS v –5 V, VGS = –2.7 V
–3
A
DiS
OS
R
i
b
VGS = –4.5 V, ID = –3.2 A
0.06
0.075
W
Drain-Source On-State Resistanceb
rDS(on)
VGS = –3.0 V, ID = –2.0 A
0.078
0.105
W
VGS = –2.7 V, ID = –1 A
0.085
0.115
Forward Transconductanceb
gfs
VDS = –9 V, ID = –3.4 A
8
S
Diode Forward Voltageb
VSD
IS = –2.0 A, VGS = 0 V
–0.7
–1.2
V
Dynamica
Total Gate Charge
Qg
V
6 V V
45 V I
32 A
10
20
C
Gate-Source Charge
Qgs
VDS = –6 V, VGS = –4.5 V, ID = –3.2 A
2.1
nC
Gate-Drain Charge
Qgd
3.3
Turn-On Delay Time
td(on)
V6 V R
6
W
16
40
Rise Time
tr
VDD = –6 V, RL = 6 W
I1 A V
4 5 V R
6
W
46
80
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ –1 A, VGEN = –4.5 V, RG = 6 W
40
70
ns
Fall Time
tf
25
40
Source-Drain Reverse Recovery Time
trr
IF = –2.0 A, di/dt = 100 A/ms
60
100
Notes
a.
For design aid only; not subject to production testing.
b.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.


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