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SI9933ADY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI9933ADY Datasheet(HTML) 2 Page - Vishay Siliconix |
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Si9933ADY Vishay Siliconix www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70651 S-00652—Rev. B, 27-Mar-00 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –0.8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = –16 V, VGS = 0 V –1 mA Zero Gate Voltage Drain Current IDSS VDS = –10 V, VGS = 0 V, TJ = 85_C –3 mA On-State Drain Currentb ID(on) VDS v –5 V, VGS = –4.5 V –16 A On-State Drain Currentb ID(on) VDS v –5 V, VGS = –2.7 V –3 A DiS OS R i b VGS = –4.5 V, ID = –3.2 A 0.06 0.075 W Drain-Source On-State Resistanceb rDS(on) VGS = –3.0 V, ID = –2.0 A 0.078 0.105 W VGS = –2.7 V, ID = –1 A 0.085 0.115 Forward Transconductanceb gfs VDS = –9 V, ID = –3.4 A 8 S Diode Forward Voltageb VSD IS = –2.0 A, VGS = 0 V –0.7 –1.2 V Dynamica Total Gate Charge Qg V 6 V V 45 V I 32 A 10 20 C Gate-Source Charge Qgs VDS = –6 V, VGS = –4.5 V, ID = –3.2 A 2.1 nC Gate-Drain Charge Qgd 3.3 Turn-On Delay Time td(on) V6 V R 6 W 16 40 Rise Time tr VDD = –6 V, RL = 6 W I1 A V 4 5 V R 6 W 46 80 Turn-Off Delay Time td(off) DD , L ID ^ –1 A, VGEN = –4.5 V, RG = 6 W 40 70 ns Fall Time tf 25 40 Source-Drain Reverse Recovery Time trr IF = –2.0 A, di/dt = 100 A/ms 60 100 Notes a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
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