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HY27UF084G2B Datasheet(PDF) 17 Page - Hynix Semiconductor

Part # HY27UF084G2B
Description  4Gbit (512Mx8bit) NAND Flash
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY27UF084G2B Datasheet(HTML) 17 Page - Hynix Semiconductor

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Rev 0.4 / Jan. 2008
17
1
HY27UF(08/16)4G2B Series
4Gbit (512Mx8bit) NAND Flash
Table 7 : Valid Blocks Numbers
NOTE:
1. The 1st block is guaranteed to be a valid block at the time of shipment.
Parameter
Symbol
Min
Typ
Max
Unit
Valid Block
Number
NVB
4016
-
4096
Blocks
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (Commercial Temperature Range)
0 to 70
Ambient Operating Temperature (Industrial Temperature Range)
-40 to 85
TBIAS
Temperature Under Bias
-50 to 125
TSTG
Storage Temperature
-65 to 150
V
VIO(2)
Input or Output Voltage
-0.6 to 4.6
V
Vcc
Supply Voltage
-0.6 to 4.6
V
Table 8: Absolute maximum ratings
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
the device at these or any other conditions above those indicated in the Operating sections of this specification is
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Refer also to the Hynix SURE Program and other relevant quality documents.
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.


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