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PSCT75 Datasheet(PDF) 3 Page - Powersem GmbH |
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PSCT75 Datasheet(HTML) 3 Page - Powersem GmbH |
3 / 3 page PSCT 75 POWERSEM GmbH, Walpersdorfer Str. 53 2005 POWERSEM reserves the right to change limits, test conditions and dimensions 91126 D- Schwabach Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20 0.1 1 10 10 10 10 10 10 01 23 4 mA V VG IG 1 2 3 4 5 6 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10W Fig.4 Gate trigger characteristic 50 100 150 200 0 20 40 60 80 DC sin.180° rec.120° rec.60° rec.30° T (°C) C ITAV [A] Fig.5 Maximum forward current at case temperature Fig.6 Transient thermal impedance per thyristor or diode (calculated) 0.01 0.1 1 10 0.2 0.4 0.6 0.8 1 K/W Z th t[s] Z thJK Z thJC Fig. 7 Power dissipation vs. direct output current and ambient temperature 70 50 30 10 0 50 100 150 200 250 300 75 80 85 90 95 100 105 110 115 120 125 TC °C DC sin.180° rec.120° rec.60° rec.30° 1.5 0.67 0.39 0.25 0.170.09 = RTHCA [K/W] ITAVM [A] Tamb [K] 0 50 100 150 [W] PVTOT PSCT 75 |
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