Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

HY5PS12421F-E3 Datasheet(PDF) 14 Page - Hynix Semiconductor

Part # HY5PS12421F-E3
Description  512Mb DDR2 SDRAM
Download  35 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY5PS12421F-E3 Datasheet(HTML) 14 Page - Hynix Semiconductor

Back Button HY5PS12421F-E3 Datasheet HTML 10Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 11Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 12Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 13Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 14Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 15Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 16Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 17Page - Hynix Semiconductor HY5PS12421F-E3 Datasheet HTML 18Page - Hynix Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 14 / 35 page
background image
Rev. 1.4 / July 2006
14
1HY5PS12421(L)F
HY5PS12821(L)F
HY5PS121621(L)F
3.3 Output Buffer Characteristics
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
3.3.3 OCD default characteristics
Note 1: Absolute Specifications (0°C
T
CASE ≤ +tbd°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
Note 2: Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV;
(VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ-280mV.
Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol
must be less than 23.4 ohms for values of VOUT between 0V and 280mV.
Note 3: Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and
voltage.
Note 4: Slew rate measured from vil(ac) to vih(ac).
Note 5: The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew
rate as measured from AC to AC. This is guaranteed by design and characterization.
Note 6: This represents the step size when the OCD is near 18 ohms at nominal conditions across all process
corners/variations and represents only the DRAM uncertainty. A 0 ohm value(no calibration) can only be
achieved if the OCD impedance is 18 ohms +/- 0.75 ohms under nominal conditions.
Symbol
Parameter
SSTL_18 Class II
Units
Notes
VOTR
Output Timing Measurement Reference Level
0.5 * VDDQ
V1
1. The VDDQ of the device under test is referenced.
Symbol
Parameter
SSTl_18
Units
Notes
IOH(dc)
Output Minimum Source DC Current
- 13.4
mA
1, 3, 4
IOL(dc)
Output Minimum Sink DC Current
13.4
mA
2, 3, 4
1.
VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280
mV.
2.
VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.
3.
The dc value of VREF applied to the receiving device is set to VTT
4.
The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current
capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The
actual current values are derived by shifting the desired driver operating point (see Section 3.3) along a 21 ohm load line to define
a convenient driver current for measurement.
Description
Parameter
Min
Nom
Max
Unit
Notes
Output impedance
12.6
18
23.4
ohms
1,2
Output impedance step size for OCD cali-
bration
0
1.5
ohms
6
Pull-up and pull-down mismatch
0
4
ohms
1,2,3
Output slew rate
Sout
1.5
-
5
V/ns
1,4,5,6,7,8


Similar Part No. - HY5PS12421F-E3

ManufacturerPart #DatasheetDescription
logo
Hynix Semiconductor
HY5PS12421F-3 HYNIX-HY5PS12421F-3 Datasheet
623Kb / 35P
   512Mb DDR2 SDRAM
HY5PS12421F-5 HYNIX-HY5PS12421F-5 Datasheet
623Kb / 35P
   512Mb DDR2 SDRAM
More results

Similar Description - HY5PS12421F-E3

ManufacturerPart #DatasheetDescription
logo
Hynix Semiconductor
HY5PS12421AFP HYNIX-HY5PS12421AFP Datasheet
1Mb / 37P
   512Mb DDR2 SDRAM
H5PS5162FFR-C HYNIX-H5PS5162FFR-C Datasheet
530Kb / 39P
   512Mb DDR2 SDRAM
HY5PS12421F HYNIX-HY5PS12421F Datasheet
623Kb / 35P
   512Mb DDR2 SDRAM
HY5PS12421FP HYNIX-HY5PS12421FP Datasheet
622Kb / 35P
   512Mb DDR2 SDRAM
H5PS5182GFR HYNIX-H5PS5182GFR Datasheet
1Mb / 64P
   512Mb DDR2 SDRAM
logo
Nanya Technology Corpor...
NT5TU64M8EE NANYA-NT5TU64M8EE Datasheet
3Mb / 96P
   DDR2 512Mb SDRAM
logo
Hynix Semiconductor
HY5PS12421CFP-E3I HYNIX-HY5PS12421CFP-E3I Datasheet
618Kb / 38P
   512Mb DDR2 SDRAM
HY5PS12421CFP-E3 HYNIX-HY5PS12421CFP-E3 Datasheet
619Kb / 38P
   512Mb DDR2 SDRAM
H5PS5162FFR-E3 HYNIX-H5PS5162FFR-E3 Datasheet
530Kb / 39P
   512Mb DDR2 SDRAM
HY5PS12421BFP-E3 HYNIX-HY5PS12421BFP-E3 Datasheet
628Kb / 38P
   512Mb DDR2 SDRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com