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HY5DU283222AQP Datasheet(PDF) 51 Page - Hynix Semiconductor |
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HY5DU283222AQP Datasheet(HTML) 51 Page - Hynix Semiconductor |
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51 / 51 page  Rev. 0.1 / Jan. 2005 51 HY5DU283222AQP Write DM Operation NOP WRITE NOP NOP NOP NOP PRE NOP NOP Col n ACT RA Bank x tCL tIS tIH tIS tIH DIS AP tIS tIH tDPL /CK CK CKE CMD AP BA0,BA1 RA, CA RA RA RA BA tDQSS tDSH tDQSH tWPST tDQSL tWPRES tWPRE DQS DQ DM Case 1 : tDQSS = min DI n DQ DM DQS Case 2 : tDQSS tWPRES tWPRE tDQSL tDQSH tDSS tDSS tWPST DI n VALID tCH tCK One Bank Bank x All Banks tIS tIH tRP DI n = Data in for column n Burst length = 4 in the case shown 3 subsequent elements of Data In are applied in the programmed order following Data In (the second element of the four is masked) DIS AP = Enable Autoprecharge * = * “ Don’t Care”, if AP is high at this point PRE=Precharge, ACT=Active, RA=Row Address, BA=Bank Address NOP commands are shown for ease of illustration; other valid commands may be possible at these times Don’t care tDQSS = max |
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