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H57V2582GTR-60I Datasheet(PDF) 10 Page - Hynix Semiconductor

Part # H57V2582GTR-60I
Description  256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H57V2582GTR-60I Datasheet(HTML) 10 Page - Hynix Semiconductor

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111
Synchronous DRAM Memory 256Mbit
H57V2582GTR-xxI Series
Rev 1.0 / Aug. 2009
10
DC CHARACTERISTICS II (TA= -40 to 85oC)
Note:
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3. H57V2562GTR-XXI Series: Normal,
H57V2562GTR-XXJ Series: Low Power
Parameter
Symbol
Test Condition
Speed
Unit
Note
166
133
Operating Current
IDD1
Burst length=1, One bank active
tRC
≥ tRC(min), IOL=0mA
90
70
mA
1
Precharge Standby
Current
in Power Down Mode
IDD2P
CKE
≤ VIL(max), tCK = 15ns
2
mA
IDD2PS
CKE
≤ VIL(max), tCK = ∞
2mA
Precharge Standby
Current
in Non Power Down
Mode
IDD2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
2clks.
All other pins
≥ VDD-0.2V or ≤ 0.2V
15
mA
IDD2NS
CKE
≥ VIH(min), tCK = ∞
Input signals are stable.
8
Active Standby Cur-
rent
in Power Down Mode
IDD3P
CKE
≤ VIL(max), tCK = 15ns
5
mA
IDD3PS
CKE
≤ VIL(max), tCK = ∞
5
Active Standby
Current in Non Power
Down Mode
IDD3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
Input signals are changed one time during
2clks.
All other pins
≥ VDD-0.2V or ≤ 0.2V
28
mA
IDD3NS
CKE
≥ VIH(min), tCK = ∞
Input signals are stable.
20
Burst Mode Operating
Current
IDD4
tCK
≥ tCK(min), IOL=0mA
All banks active
100
80
mA
1
Auto Refresh Current
IDD5
tRC
≥ tRC(min), All banks active
160
140
mA
2
Self Refresh Current
IDD6
CKE
≤ 0.2V
Normal
2
mA
3
Low Power
1


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