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H5RS5223CFR-11C Datasheet(PDF) 9 Page - Hynix Semiconductor

Part # H5RS5223CFR-11C
Description  512Mbit (16Mx32) GDDR3 SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5RS5223CFR-11C Datasheet(HTML) 9 Page - Hynix Semiconductor

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Rev.1.5 / Jul. 2008
9
H5RS5223CFR
ODT Updating
The GDDR3 SDRAM uses programmable impedance output buffers. This allows a user to match the driver impedance to the system.
To adjust the impedance, an external precision resistor (RQ) is connected between the ZQ pin and VSSQ. The value of the resistor
must be six times the desired driver impedance. For example, a 240
Ω. resistor is required for an output impedance of 40Ω. To ensure
that output impedance is one-sixth the value of RQ (within 10 percent), RQ should be in the range of 210
Ω. to 270Ω. (30Ω. - 50Ω.
output impedance).
CK and CK# are not internally terminated. CK and CK# will be terminated on the system module using external 1% resistors.
The output impedance and on die termination is updated during every AUTO REFRRESH commands to compensate for variations in
supply voltage and temperature. The output impedance updates are transparent to the system. Impedance updates do not affect
device operation, and all datasheet timings and current specifications are met during an update.
A maximum of eight AUTO REFRESH commands can be posted to any given GDDR3 SDRAM, meaning that the maximum absolute
interval between any AUTO REFRESH command and the next AUTO REFRESH command is 8 x 3.9us (31.2us). This maximum abso-
lute interval guarantees that the output drivers and the on die terminations of GDDR3 SDRAMs are recalibrated often enough to keep
the impedance characteristics of those within the specified boundaries.
ODT Control
Bus snooping for READ commands other than CS# is used to control the on die termination in the dual load configuration. The
GDDR3 SGRAM will disable the DQ and RDQS on die termination when a READ command is detected regardless of the state of CS#.
The on die termination is disabled x clocks after the READ command where x equals CL-1 and stay off for a duration of BL/2+2CK. In
a two-rank system, both DRAM devices snoop the bus for READ commands to either device and both will disable the on die termina-
tion, for the DQ and DQS pins if a READ command is detected. The on die termination for all other pins on the device is always
turned-on for both a single-rank system and a dual-rank system unless it is turned off in the EMRS. Only DQ,WDQS and DM pins can
turn off through the EMRS.


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