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H5PS1G83EFR-E3C Datasheet(PDF) 9 Page - Hynix Semiconductor

Part # H5PS1G83EFR-E3C
Description  1Gb DDR2 SDRAM
Download  63 Pages
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5PS1G83EFR-E3C Datasheet(HTML) 9 Page - Hynix Semiconductor

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Rev. 1.0 / Aug 2009
9
Release
H5PS1G83EFR Series
2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions. please refer to JESD51-2 standard.
2.2 Operating Temperature Condition
Note:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-
ment conditions, please refer to JESD51-2 standard.
2. At 85~95° TOPER , Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-
perature range it must be required an EMRS command to change itself refresh rate.
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 1.0 V ~ 2.3 V
V
1
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VDDL
Voltage on VDDL pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
VIN, VOUT
Voltage on any pin relative to Vss
- 0.5 V ~ 2.3 V
V
1
TSTG
Storage Temperature
-55 to +100
°C
1, 2
II
Input leakage current; any input 0V VIN VDD;
all other balls not under test = 0V)
-2 uA ~ 2 uA
uA
IOZ
Output leakage current; 0V VOUT VDDQ; DQ
and ODT disabled
-5 uA ~ 5 uA
uA
Symbol
Parameter
Rating
Units
Notes
TOPER
Operating Temperature
Commercial
0 to 95
°C
1,2
Industrial
-40 to 95


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