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H5MS1222EFP-K3M Datasheet(PDF) 39 Page - Hynix Semiconductor |
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H5MS1222EFP-K3M Datasheet(HTML) 39 Page - Hynix Semiconductor |
39 / 62 page Rev 1.0 / Jun. 2008 39 Mobile DDR SDRAM 128Mbit (4M x 32bit) H5MS1222EFP Series Write Burst (min. and max. tDQSS) /CLK CLK WRITE NOP NOP NOP NOP BA, Col b tDQSS min Don't Care 1) DI b = Data In to column b 2) 3 subsequent elements of Data In are applied in the programmed order following DI b 3) A non-interrupted burst of 4 is shown 4) A10 is low with the WRITE command (Auto Precharge is disabled) Command Address DQS DQ DQS DQ NOP DM DM tDQSS max |
Similar Part No. - H5MS1222EFP-K3M |
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Similar Description - H5MS1222EFP-K3M |
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