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H5MS1222EFP-Q3M Datasheet(PDF) 37 Page - Hynix Semiconductor

Part # H5MS1222EFP-Q3M
Description  128Mbit MOBILE DDR SDRAM based on 1M x 4Bank x32 I/O
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5MS1222EFP-Q3M Datasheet(HTML) 37 Page - Hynix Semiconductor

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Rev 1.0 / Jun. 2008
37
Mobile DDR SDRAM 128Mbit (4M x 32bit)
H5MS1222EFP Series
READ to PRECHARGE
A Read burst may be followed by or truncated with a PRECHARGE command to the same bank (provided Auto Pre-
charge was not activated). The PRECHARGE command should be issued X cycles after the READ command, where X
equal the number of desired data-out element pairs.
Following the PRECHARGE command, a subsequent command to the same bank cannot be issued until tRP is met.
Note that part of the row precharge time is hidden during the access of the last data-out elements.In the case of a
Read being executed to completion, a PRECHARGE command issued at the optimum time (as described above) pro-
vides the same operation that would result from Read burst with Auto Precharge enabled.
The disadvantage of the PRECHARGE command is that it requires that the command and address buses be available at
the appropriate time to issue the command. The advantage of the PRECHARGE command is that it can be used to
truncate bursts.
READ to PRECHARGE
/CLK
CLK
Do
n
Do
n
READ
NOP
PRE
NOP
NOP
ACT
BA,
Col
n
CL =3
CL =2
Don't Care
1) DO
n = Data Out from column n
2) Cases shown are either uninterrupted burst of 4, or interrupted bursts of 8
3) Shown with nominal tAC, tDQSCK and tDQSQ
4) Precharge may be applied at (BL / 2) tCK after the READ command.
5) Note that Precharge may not be issued before tRAS ns after the ACTIVE command for applicable banks.
6) The ACTIVE command may be applied if tRC has been met.
Command
Address
DQS
DQ
DQS
DQ
Bank
(A or All)
BA,
Row
tRP


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