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H5MS1222EFP-L3E Datasheet(PDF) 32 Page - Hynix Semiconductor |
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H5MS1222EFP-L3E Datasheet(HTML) 32 Page - Hynix Semiconductor |
32 / 62 page Rev 1.0 / Jun. 2008 32 Mobile DDR SDRAM 128Mbit (4M x 32bit) H5MS1222EFP Series The first data-out element is edge aligned with the first rising edge of DQS and the successive data-out elements are edge aligned to successive edges of DQS. This is shown in next figure with a CAS latency of 2 and 3. Upon completion of a read burst, assuming no other READ command has been initiated, the DQ will go to High-Z. Read Burst Showing CAS Latency /CLK CLK Do n Do n READ NOP NOP NOP NOP NOP BA, Col n CL =3 CL =2 Don't Care 1) Do n : Data out from column n 2) BA, Col n = Bank A, Column n 3) Burst Length = 4; 3 subseqnent elements of Data Out appear in the programmed order following Do n 4) Shown with nominal tAC, tDQSCK and tDQSQ Command Address DQS DQ DQS DQ |
Similar Part No. - H5MS1222EFP-L3E |
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Similar Description - H5MS1222EFP-L3E |
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