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H5MS2562JFR-E3M Datasheet(PDF) 5 Page - Hynix Semiconductor

Part # H5MS2562JFR-E3M
Description  256Mb (16Mx16bit) Mobile DDR SDRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

H5MS2562JFR-E3M Datasheet(HTML) 5 Page - Hynix Semiconductor

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Rev 1.2 / July. 2009
5
Mobile DDR SDRAM 256Mbit (16M x 16bit)
H5MS2562JFR Series
The Hynix H5MS2562JFR series has the special Low Power function of Auto TCSR (Temperature Compensated Self
Refresh) to reduce self refresh current consumption. Since an internal temperature sensor is implemented, it enables
to automatically adjust refresh rate according to temperature without external EMRS command.
Deep Power Down Mode is an additional operating mode for Low Power DDR SDRAM (Mobile DDR SDRAM). This mode
can achieve maximum power reduction by removing power to the memory array within Low Power DDR SDRAM
(Mobile DDR SDRAM). By using this feature, the system can cut off almost all DRAM power without adding the cost of
a power switch and giving up mother-board power-line layout flexibility.
All inputs are LVCMOS compatible. Devices will have a VDD and VDDQ supply of 1.8V (nominal).
The Hynix H5MS2562JFR series is available in the following package:
- 60Ball FBGA [8mm x 10mm, t=1.0mm
max]
256Mb Mobile DDR SDRAM ORDERING INFORMATION
Part Number
Clock Frequency
Organiza-
tion
Interface
Operating
temperature
Package
H5MS2562JFR-E3M
200MHz(CL3) / 83MHz(CL2)
4banks x 4Mb
x 16
LVCMOS
Mobile Temp
(-30
oC ~ 85oC)
Lead & Halogen
Free
H5MS2562JFR-J3M
166MHz(CL3) / 83MHz(CL2)
H5MS2562JFR-K3M
133MHz(CL3) / 83MHz(CL2)
H5MS2562JFR-L3M
100MHz(CL3) / 66MHz(CL2)


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