 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
H5MS5132DFR Datasheet(PDF) 4 Page - Hynix Semiconductor |
|
||||||||||||||||||||||||||||||
H5MS5132DFR Datasheet(HTML) 4 Page - Hynix Semiconductor |
|
|
4 / 62 page  Rev 1.2 / Jul. 2008 4 11 Mobile DDR SDRAM 512Mbit (16M x 32bit) H5MS5122DFR Series / H5MS5132DFR Series DESCRIPTION The Hynix H5MS5122DFR Series is 536,870,912-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM), ideally suited for mobile applications which use the battery such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, hand-held PCs. It is organized as 4banks of 4,194,304 x32. The HYNIX H5MS5122DFR series uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2 n prefetch architecture with an interface designed to transfer two data per clock cycle at the I/O pins. The Hynix H5MS5122DFR Series offers fully synchronous operations referenced to both rising and falling edges of the clock. While all address and control inputs are latched on the rising edges of the CK (Mobile DDR SDRAM operates from a differential clock : the crossing of CK going HIGH and CK going LOW is referred to as the positive edge of CK), data, data strobe and data mask inputs are sampled on both rising and falling edges of it ( Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK). The data paths are internally pipelined and 2-bit prefetched to achieve high bandwidth. All input voltage levels are compatible with LVCMOS. Read and write accesses to the Low Power DDR SDRAM (Mobile DDR SDRAM) are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits reg- istered coincident with the ACTIVE command are used to select the bank and the row to be accessed. The address bits registered coincident with the READ or WRITE command are used to select the bank and the starting column location for the burst access. The Low Power DDR SDRAM (Mobile DDR SDRAM) provides for programmable read or write bursts of 2, 4 or 8 loca- tions. An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst access. As with standard SDRAM, the pipelined and multibank architecture of Low Power DDR SDRAM (Mobile DDR SDRAM) allows for concurrent operation, thereby providing high effective bandwidth by hiding row precharge and activation times. The Low Power DDR SDRAM (Mobile DDR SDRAM) also provides for special programmable Self Refresh options which are Partial Array Self Refresh (full, half, quarter and 1/8 and 1/16 array) and Temperature Compensated Self Refresh. A burst of Read or Write cycles in progress can be interrupted and replaced by a new burst Read or Write command on any cycle (this pipelined design is not restricted by a 2N rule). Only Read bursts in progress with auto precharge disa- bled can be terminated by a burst terminate command. Burst Terminate command is undefined and should not be used for Read with Autoprecharge enabled and for Write bursts. |
Similar Part No. - H5MS5132DFR |
|
Similar Description - H5MS5132DFR |
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
