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H5MS1G22MFP-K3M Datasheet(PDF) 44 Page - Hynix Semiconductor |
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H5MS1G22MFP-K3M Datasheet(HTML) 44 Page - Hynix Semiconductor |
44 / 63 page Rev 1.2 / Jun. 2008 44 Mobile DDR SDRAM 1Gbit (32M x 32bit) H5MS1G22MFP Series / H5MS1G32MFP Series Interrupting Write to Read /CLK CLK WRITE NOP NOP READ NOP BA, Col b Don't Care 1) DI b = Data In to column b. DO n = Data Out from column n. 2) An interrupted burst of 4 is shown, 2 data elements are written. 3 subsequent elements of Data In are applied in the programmed order following DI b. 3) tWTR is referenced from the positive clock edge after the last Data In pair. 4) A10 is LOW with the WRITE command (Auto Precharge is disabled) 5) The READ and WRITE commands are to the same device but not necessarily to the same bank. Command Address DQS DQ NOP DM tDQSS max tWTR CL=3 NOP DI b BA, Col n Do n |
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Similar Description - H5MS1G22MFP-K3M |
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