H5DU5182ETR-E3C datasheet(23/29 Pages) HYNIX

Part #	H5DU5182ETR-E3C

Description	512Mb DDR SDRAM

Download	29 Pages

Scroll/Zoom	100%

Manufacturer	HYNIX [Hynix Semiconductor]

Direct Link	http://www.skhynix.com/kor/main.do

Logo

23 / 29 page

Rev. 1.0 / Nov. 2009

23

1H5DU5182ETR

H5DU5162ETR

- Continue

Parameter

Symbol

DDR500

DDR400B

DDR333

DDR266A

DDR266B

UNIT

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Data-out high-impedance window

from CK,/CK10

tHZ

-0.65

0.65

-0.7

0.7

-0.7

0.7

-0.75

0.75

-0.75

0.75

ns

Data-out low-impedance window

from CK, /CK10

tLZ

-0.65

0.65

-0.7

0.7

-0.7

0.7

-0.75

0.75

-0.75

0.75

ns

Input Setup Time (fast slew

rate)14,16-18

tIS

0.6

-

0.6

-

0.75

-

0.9

-

0.9

-

ns

Input Hold Time (fast slew

rate)14,16-18

tIH

0.6

-

0.6

-

0.75

-

0.9

-

0.9

-

ns

Input Setup Time (slow slew

rate)15-18

tIS

0.6

-

0.7

-

0.8

-

1.0

-

1.0

-

ns

Input Hold Time (slow slew

rate)15-18

tIH

0.6

-

0.7

-

0.8

-

1.0

-

1.0

-

ns

Input Pulse Width17

tIPW

2.2

-

2.2

-

2.2

-

2.2

-

2.2

-

ns

Write DQS High Level Width

tDQSH

0.35

-

0.35

-

0.35

-

0.35

-

0.35

-

tCK

Write DQS Low Level Width

tDQSL

0.35

-

0.35

-

0.35

-

0.35

-

0.35

-

tCK

Clock to First Rising edge of DQS-

In

tDQSS

0.72

1.25

0.72

1.25

0.75

1.25

0.75

1.25

0.75

1.25

tCK

DQS falling edge to CK setup time

tDSS

0.2

-

0.2

-0.2

-tCK

DQS falling edge hold time from

CK

tDSH

0.2

-

0.2

-0.2

-tCK

DQ & DM input setup time25

tDS

0.4

-

0.4

-

0.45

-

0.5

-

0.5

-

ns

DQ & DM input hold time25

tDH

0.4

-

0.4

-

0.45

-

0.5

-

0.5

-

ns

DQ & DM Input Pulse Width17

tDIPW

1.6

-

1.75

-

1.75

-

1.75

-

1.75

-

ns

Read DQS Preamble Time

tRPRE

0.9

1.1

0.9

1.1

0.9

1.1

0.9

1.1

0.9

1.1

tCK

Read DQS Postamble Time

tRPST

0.4

0.6

0.4

0.6

0.4

0.6

0.4

0.6

0.4

0.6

tCK

Write DQS Preamble Setup Time12 tWPRES

0

-

0

-0

-

0

-

0

-

ns

Write DQS Preamble Hold Time

tWPREH 0.25

-

0.25

-

0.25

-

0.25

-

0.25

-

tCK

Write DQS Postamble Time11

tWPST

0.4

0.6

0.4

0.6

0.4

0.6

0.4

0.6

0.4

0.6

tCK

Mode Register Set Delay

tMRD

2

-

2

-2

-

2

-

2

-

tCK

Exit Self Refresh to non-Read

command23

tXSNR

75

-

75

-75

-

75

-

75

-

ns

Exit Self Refresh to Read

command

tXSRD

200

-

200

-

200

-

200

-

200

-

tCK

Average Periodic Refresh

Interval13,25

tREFI

-

7.8

-

7.8

-

7.8

-

7.8

-

7.8

us

Similar Part No. - H5DU5182ETR-E3C

Manufacturer	Part #	Datasheet	Description
Hynix Semiconductor	H5DU5182ETR-E3I	353Kb / 29P	512Mb DDR SDRAM

More results

Similar Description - H5DU5182ETR-E3C

Manufacturer	Part #	Datasheet	Description
Hynix Semiconductor	HY5DU12822B	396Kb / 37P	512Mb DDR SDRAM
	H5DU5182EFR-FAC	523Kb / 30P	512Mb DDR SDRAM
	HY5DU12822DT-D43	1Mb / 29P	512Mb DDR SDRAM
	HY5DU12422BT	692Kb / 31P	512Mb DDR SDRAM
	HY5DU12422AT	381Kb / 33P	512Mb DDR SDRAM
	H5DU5182ETR-FAI	353Kb / 29P	512Mb DDR SDRAM
	HY5DU12822DFP-D43I	466Kb / 29P	512Mb DDR SDRAM
	HY5DU12822DFP-D43	468Kb / 29P	512Mb DDR SDRAM
	HY5DU12422C	2Mb / 31P	512Mb DDR SDRAM
	H5DU5182EFR-FAJ	511Kb / 30P	512Mb DDR SDRAM

More results

H5DU5182ETR-E3C Datasheet(PDF) 23 Page - Hynix Semiconductor

H5DU5182ETR-E3C Datasheet(HTML) 23 Page - Hynix Semiconductor

Similar Part No. - H5DU5182ETR-E3C

Similar Description - H5DU5182ETR-E3C

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29

Datasheet Download

Link URL