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HMC324MS8G Datasheet(PDF) 1 Page - Hittite Microwave Corporation

Part No. HMC324MS8G
Description  GaAs InGaP HBT MMIC DUAL DRIVER AMPLIFIER, DC - 3.0 GHz
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Maker  HITTITE [Hittite Microwave Corporation]
Homepage  http://www.hittite.com
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HMC324MS8G Datasheet(HTML) 1 Page - Hittite Microwave Corporation

   
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MICROWAVE CORPORATION
1 - 158
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Visit us at www.hittite.com, or Email at sales@hittite.com
1
HMC324MS8G
GaAs InGaP HBT MMIC DUAL DRIVER
AMPLIFIER, DC - 3.0 GHz
v01.0701
General Description
Features
Functional Diagram
The HMC324MS8G is a high efficiency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC ampli-
fier that contains two non-connected amplifiers in
parallel inside an 8 lead MSOPG package. When
used in conjunction with an external balun, the out-
puts of the amplifier can be combined to reduce
the 2nd harmonic distortion that is generated by
the amplifier. With Vcc at +7.5V, the HMC324MS8G
offers 13 dB of gain and with power combining and
harmonic cancellation, +24 dBm of output power
can be achieved. Using a Darlington feedback pair
results in reduced sensitivity to normal process vari-
ations and provides a good 50-ohm input/output
port match. This amplifier is ideal for RF systems
where high linearity is required and can operate in
50-ohm and 75-ohm systems.
P1dB Output Power: +16 dBm
Output IP3: +30 dBm
Gain: 13 dB
Single Supply: 8.75V
Ultra Small Package: MSOP8G
Electrical Specifications, T
A = +25° C
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Typical Applications
This Amplifier is ideal for RF Systems
where high linearity is required such as:
• CATV Head-End and Modem
• Cellular & Base Stations
• MMDS
• WirelessLAN
Note: All specifications refer to a single amplifier.


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