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PBMB50E6 Datasheet(PDF) 3 Page - Nihon Inter Electronics Corporation

Part # PBMB50E6
Description  IGBT Module-H Bridge 50A, 600V
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Manufacturer  NIEC [Nihon Inter Electronics Corporation]
Direct Link  http://www.niec.co.jp
Logo NIEC - Nihon Inter Electronics Corporation

PBMB50E6 Datasheet(HTML) 3 Page - Nihon Inter Electronics Corporation

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QS043-402-（4/5）
00
日本インター株式会社
ＰＢＭＢ５０Ｅ６
020
40
60
80
0
0.2
0.4
0.6
0.8
1
Collector Current IC (A)
Fig.7- Collector Current vs. Switching Time (Typical)
tOFF
tf
tr(V
CE)
tON
VCC=300V
RG=20
VGE=±15V
TC=25°C
Resistive Load
10
30
100
300
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance RG ( )
Fig.8- Series Gate Impedance vs. Switching Time (Typical)
VCC=300V
IC=50A
VGE=±15V
TC=25°C
Resistive Load
tf
tr(V
CE)
ton
toff
10
30
100
300
0.02
0.05
0.1
0.2
0.5
1
2
5
10
Series Gate Impedance RG ( )
Fig.10- Series Gate Impedance vs. Switching Time
VCC=300V
IC=50A
VGE=±15V
TC=125°C
Inductive Load
tf
tr(I
C)
ton
toff
0
1020
3040
5060
7080
0
1
2
3
4
Collector Current IC (A)
Fig.11- Collector Current vs. Switching Loss
EOFF
EON
VCC=300V
RG=20
VGE=±15V
TC=125°C
Inductive Load
ERR
10
30
100
300
0.3
1
3
10
30
100
Series Gate Impedance RG ( )
Fig.12- Series Gate Impedance vs. Switching Loss
EOFF
EON
VCC=300V
IC=50A
VGE=±15V
TC=125°C
Inductive Load
ERR
020
40
60
80
0.001
0.01
0.1
1
10
Collector Current IC (A)
Fig.9- Collector Current vs. Switching Time
tOFF
tf
tr(Ic)
tON
VCC=300V
RG=20
VGE=±15V
TC=125°C
Inductive Load


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