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HYMP125P72CP4L-Y5 Datasheet(PDF) 10 Page - Hynix Semiconductor |
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HYMP125P72CP4L-Y5 Datasheet(HTML) 10 Page - Hynix Semiconductor |
10 / 27 page Rev. 0.2 / May. 2008 1 240pin DDR2 VLP Registered DIMMs ABSOLUTE MAXIMUM RATINGS Note : 1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con ditions for extended periods may affect reliablility. OPERATING CONDITIONS Note : 1. Up to 9850 ft. 2. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2. DC OPERATING CONDITIONS (SSTL_1.8) Note : 1. VDDQ must be less than or equal to VDD. 2. Peak to peak ac noise on VREF may not exeed +/-2% VREF(dc) 3. VTT of transmitting device must track VREF of receiving device. Parameter Symbol Value Unit Note Voltage on VDD pin relative to Vss VDD - 1.0 V ~ 2.3 V V 1 Voltage on VDDL pin relative to Vss VDDL -0.5V ~ 2.3 V V 1 Voltage on VDDQ pin relative to Vss VDDQ - 0.5 V ~ 2.3 V V 1 Voltage on any pin relative to Vss VIN, VOUT - 0.5 V ~ 2.3 V V 1 Storage Temperature TSTG -50 ~ +100 oC 1 Storage Humidity(without condensation) HSTG 5 to 95 % 1 Parameter Symbol Rating Units Notes DIMM Operating temperature(ambient) TOPR 0 ~ +55 oC DIMM Barometric Pressure(operating & storage) PBAR 105 to 69 K Pascal 1 DRAM Component Case Temperature Range TCASE 0 ~+95 oC 2 Parameter Symbol Min Max Unit Note Power Supply Voltage VDD 1.7 1.9 V VDDL 1.7 1.9 V VDDQ 1.7 1.9 V 1 Input Reference Voltage VREF 0.49 x VDDQ 0.51 x VDDQ V2 EEPROM Supply Voltage VDDSPD 1.7 3.6 V Termination Voltage VTT VREF-0.04 VREF+0.04 V 3 |
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