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LTC4449IDCB Datasheet(PDF) 3 Page - Linear Technology |
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LTC4449IDCB Datasheet(HTML) 3 Page - Linear Technology |
3 / 12 page LTC4449 3 4449f Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LTC4449I is guaranteed to meet specifications over the full –40°C to 125°C operating junction temperature range. The LTC4449E is guaranteed to meet specifications from 0°C to 85°C with specifications over the –40°C to 85°C operating junction temperature range assured by design, characterization and correlation with statistical process controls. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating junction temperature range, otherwise specifications are at TA = 25°C. VCC = VLOGIC = VBOOST = 5V, VTS = GND = 0V, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Input Signal (IN) VIH(TG) TG Turn-On Input Threshold VLOGIC ≥ 5V, IN Rising VLOGIC = 3.3V, IN Rising l l 3 1.9 3.5 2.2 4 2.6 V V VIL(TG) TG Turn-Off Input Threshold VLOGIC ≥ 5V, IN Falling VLOGIC = 3.3V, IN Falling l l 2.75 1.8 3.25 2.09 3.75 2.5 V V VIH(BG) BG Turn-On Input Threshold VLOGIC ≥ 5V, IN Falling VLOGIC = 3.3V, IN Falling l l 0.8 0.8 1.25 1.1 1.6 1.4 V V VIL(BG) BG Turn-Off Input Theshold VLOGIC ≥ 5V, IN Rising VLOGIC = 3.3V, IN Rising l l 1.05 0.9 1.5 1.21 1.85 1.5 V V IIN(SD) Maximum Current Into or Out of IN in Shutdown Mode VLOGIC ≥ 5V, IN Floating VLOGIC = 3.3V, IN Floating 150 75 300 150 μA μA High Side Gate Driver Output (TG) VOH(TG) TG High Output Voltage ITG = –100mA, VOH(TG) = VBOOST – VTG 140 mV VOL(TG) TG Low Output Voltage ITG = 100mA, VOL(TG) = VTG – VTS 80 mV IPU(TG) TG Peak Pull-Up Current l 2 3.2 A IPD(TG) TG Peak Pull-Down Current l 1.5 2.4 A Low Side Gate Driver Output (BG) VOH(BG) BG High Output Voltage IBG = –100mA, VOH(BG) = VCC – VBG 100 mV VOL(BG) BG Low Output Voltage IBG = 100mA 100 mV IPU(BG) BG Peak Pull-Up Current l 2 3.2 A IPD(BG) BG Peak Pull-Down Current l 3 4.5 A Switching Time tPLH(TG) BG Low to TG High Propagation Delay 14 ns tPHL(TG) IN Low to TG Low Propagation Delay 13 ns tPLH(BG) TG Low to BG High Propagation Delay 13 ns tPHL(BG) IN High to BG Low Propagation Delay 11 ns tr(TG) TG Output Risetime 10% to 90%, CL = 3nF 8 ns tf(TG) TG Output Falltime 10% to 90%, CL = 3nF 7 ns tr(BG) BG Output Risetime 10% to 90%, CL = 3nF 7 ns tf(BG) BG Output Falltime 10% to 90%, CL = 3nF 4 ns The junction temperature TJ is calculated from the ambient temperature TA and power dissipation PD according to the following formula: TJ = TA + (PD • 64°C/W) Note 3: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 125°C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. |
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