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STM32F100R6H7B Datasheet(PDF) 35 Page - STMicroelectronics |
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STM32F100R6H7B Datasheet(HTML) 35 Page - STMicroelectronics |
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35 / 84 page  STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB Electrical characteristics Doc ID 16455 Rev 2 35/84 5.3.2 Operating conditions at power-up / power-down Subject to general operating conditions for TA. Table 9. Operating conditions at power-up / power-down 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 10 are derived from tests performed under the ambient temperature and VDD supply voltage conditions summarized in Table 8. VBAT Backup operating voltage 1.8 3.6 V P D Power dissipation at TA = 85 °C for suffix 6 or TA = 105 °C for suffix 7(2) LQFP100 434 mW LQFP64 444 TFBGA64 308 LQFP48 363 TA Ambient temperature for 6 suffix version Maximum power dissipation –40 85 °C Low power dissipation(3) –40 105 Ambient temperature for 7 suffix version Maximum power dissipation –40 105 °C Low power dissipation(3) –40 125 TJ Junction temperature range 6 suffix version –40 105 °C 7 suffix version –40 125 1. When the ADC is used, refer to Table 41: ADC characteristics. 2. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Table 6.2: Thermal characteristics on page 79). 3. In low power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Table 6.2: Thermal characteristics on page 79). Table 8. General operating conditions (continued) Symbol Parameter Conditions Min Max Unit Symbol Parameter Min Max Unit tVDD VDD rise time rate 0 µs/V VDD fall time rate 20 |
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