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STM32F100R6T7B Datasheet(PDF) 31 Page - STMicroelectronics

Part # STM32F100R6T7B
Description  Low & medium-density value line, advanced ARM-based 32-bit MCU Low & medium-density value line, advanced ARM-based 32-bit MCU
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F100R6T7B Datasheet(HTML) 31 Page - STMicroelectronics

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STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
Electrical characteristics
Doc ID 16455 Rev 2
31/84
5
Electrical characteristics
5.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
5.1.1
Minimum and maximum values
Unless otherwise specified the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean±3
).
5.1.2
Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = 3.3 V (for the
2V
 V
DD  3.6 V voltage range). They are given only as design guidelines and are not
tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean±2
).
5.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
5.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 8.
5.1.5
Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 9.


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