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EPC-660-0.9 Datasheet(PDF) 1 Page - EPIGAP optoelectronic GmbH |
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EPC-660-0.9 Datasheet(HTML) 1 Page - EPIGAP optoelectronic GmbH |
1 / 2 page Photodiode-Chip Preliminary 11.04.2007 rev. 07/07 Wavelength range Red, selective typ. dimensions (µm) Description 260 µm anode gold alloy, 1.5 µm cathode Applications gold alloy, 0.5 µm Miscellaneous Parameters Tamb = 25°C, unless otherwise specified Symbol Value Unit A 0.62 mm² Tamb -40 to +125 °C Tstg -40 to +125 °C Optical and Electrical Characteristics Tamb = 25°C, unless otherwise specified Parameter Test conditions Symbol Min Typ Max Unit Peak sensitivity VR = 0 V λP 660 nm Spectral range at 50 % VR = 0 V λ0.5 620 700 nm Responsivity at λP 1 VR = 0 V Sλ 0.2 A/W Responsivity at λP 2 VR = 0 V Sλ 0.42 A/W Spectral bandwidth at 50% VR = 0 V ∆ λ0,5 80 nm Dark current VR = 1 V ID 40 300 pA Junction capacitance VR = 0 V CJ 40 pF Switching time VR = 1 V tr, tf 40 ns 1Measured on bare covered chip on TO-18 header 2Measured on epoxy covered chip on TO-18 header Labeling Type Typ. ID [pA] Typ. Sλ[A/W] EPС-660-0.9 Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment Storage temperature range red-selective photodiode with narrow response range (660 nm peak) Active area Operating temperature range typ. thickness Optical communications, safety equipment, light barriers Parameter Test сonditions Type Integrated filter EPC-660-0.9 Electrodes P (anode) up Technology AlGaAs/GaAs Lot N° Quantity 720 800 860 PD-03 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 2 |
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