Photodiode-Chip

Preliminary

11.04.2007

rev. 07/07

Wavelength range

Red, selective

typ. dimensions (µm)

Description

260 µm

anode

gold alloy, 1.5 µm

cathode

Applications

gold alloy, 0.5 µm

Miscellaneous Parameters

Symbol

Value

Unit

A

0.62

mm²

-40 to +125

°C

-40 to +125

°C

Optical and Electrical Characteristics

Parameter

Test

conditions

Symbol

Min

Typ

Max

Unit

Peak sensitivity

660

nm

Spectral range at 50 %

620

700

nm

Responsivity at

1

0.2

A/W

Responsivity at

2

0.42

A/W

Spectral bandwidth at 50%

∆

80

nm

Dark current

40

300

pA

Junction capacitance

40

pF

Switching time

40

ns

Labeling

Type

EPС-660-0.9

Packing: Chips on adhesive film with wire-bond side on top

*Note: All measurements carried out with EPIGAP equipment

Storage temperature range

red-selective photodiode

with narrow response

range (660 nm peak)

Active area

Operating temperature range

typ. thickness

Optical communications,

safety equipment, light

barriers

Parameter

Test сonditions

Type

Integrated filter

EPC-660-0.9

Electrodes

P (anode) up

Technology

AlGaAs/GaAs

Lot N°

Quantity

720

800

860

PD-03

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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