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TSM1N45CTB0 Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TSM1N45CTB0 Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
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2 / 8 page  TSM1N45 450V N-Channel Power MOSFET 2/8 Version: A09 Electrical Specifications (Ta=25oC, unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250uA BVDSS 450 -- -- V Drain-Source On-State Resistance VGS = 10V, ID = 0.25A RDS(ON) -- 3.7 4.25 Ω VDS = VGS, ID = 250uA 2.3 3.0 3.7 Gate Threshold Voltage VDS = VGS, ID = 250mA VGS(TH) 3.2 4.0 4.8 V Zero Gate Voltage Drain Current VDS = 450V, VGS = 0V IDSS -- -- 10 uA Gate Body Leakage VGS = ±30V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS = 50V, ID = 0.25A gfs -- 0.7 -- S Dynamic Total Gate Charge Qg -- 6.5 10 Gate-Source Charge Qgs -- 1.3 -- Gate-Drain Charge VDS = 360V, ID = 0.5A, VGS = 10V (Note 4,5) Qgd -- 3.2 -- nC Input Capacitance Ciss -- 235 -- Output Capacitance Coss -- 29 -- Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Crss -- 6.5 -- pF Switching Turn-On Delay Time td(on) -- 14.7 -- Turn-On Rise Time tr -- 32.8 -- Turn-Off Delay Time td(off) -- 25.2 -- Turn-Off Fall Time VGS = 25V, ID = 0.5A, VDS = 225V, RG = 25Ω (Note 4,5) tf -- 23.7 -- nS Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS -- -- 0.5 A Maximum Pulsed Drain-Source Diode Forward Current ISM -- -- 4.0 A Drain-Source Diode Forward Voltage VGS = 0V, IS = 0.5A VSD -- -- 1.4 V Reverse Recovery Time trr -- 110 -- nS Reverse Recovery Charge VGS = 0V, IS = 1A dIF/dt = 100A/µS (Note 4) Qrr -- 0.35 -- µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC 3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤ BVDSS, Starting TJ=25ºC 4. Pulse test: pulse width ≤ 300uS. 5. Essentially independent of operating temperature 6. a) Reference point of the is the drain RӨJL lead b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment (RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RӨCA is determined by the user’s board design) |
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