Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

TSD1760CPRO Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Part No. TSD1760CPRO
Description  Low Vcesat NPN Transistor
Download  4 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSD1760CPRO Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

  TSD1760CPRO Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TSD1760CPRO Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TSD1760CPRO Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd TSD1760CPRO Datasheet HTML 4Page - Taiwan Semiconductor Company, Ltd  
Zoom Inzoom in Zoom Outzoom out
 1 / 4 page
background image
TSD1760
Low Vcesat NPN Transistor
1/4
Version: A09
TO-252
(DPAK)
PRODUCT SUMMARY
BVCBO
50V
BVCEO
50V
IC
3A
VCE(SAT)
0.5V @ IC / IB = 2A / 200mA
Features
Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.)
Complementary part with TSB1184CP
Structure
Epitaxial Planar Type
NPN Silicon Transistor
Ordering Information
Part No.
Package
Packing
TSD1760CP RO
TO-252
2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
5
V
DC
3
Collector Current
Pulse
IC
7 (note 1)
A
Ta=25ºC
1 (note 2)
Power Dissipation
Tc=25ºC
PD
15
W
Operating Junction Temperature
TJ
+150
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
oC
Note: 1. Single pulse, Pw=10mS, Duty≤2%
2. PCB 1.7mm thick, collector copper plating 10mm x 10mm or larger.
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
IC = 50uA, IE = 0
BVCBO
50
--
--
V
Collector-Emitter Breakdown Voltage
IC = 1mA, IB = 0
BVCEO
50
--
--
V
Emitter-Base Breakdown Voltage
IE = 50uA, IC = 0
BVEBO
5
--
--
V
Collector Cutoff Current
VCB = 30V, IE = 0
ICBO
--
--
1
uA
Emitter Cutoff Current
VEB = 4V, IC = 0
IEBO
--
--
1
uA
Collector-Emitter Saturation Voltage
IC / IB = 2A / 200mA
*VCE(SAT)
--
0.25
0.5
V
DC Current Transfer Ratio
VCE = 2V, IC = 100mA
*hFE
82
--
560
Transition Frequency
VCE =5V, IC=50mA,
f=100MHz
fT
--
90
--
MHz
Output Capacitance
VCB = 10V, f=1MHz
Cob
--
45
--
pF
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Pin Definition:
1. Base
2. Collector
3. Emitter


Html Pages

1  2  3  4 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Alldatasheet API   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn