AlGaAs/GaAs T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-526A4U

Description

Package Dimensions

The MIE-526A4U is infrared emitting diodes in

GaAs technology with AlGaAs window coating

molded in pastel pink transparent package.

Features

l

High radiant power and high radiant intensity

l

Standard T-1 3/4 (

φ 5mm) package

l

Peak wavelength

λ

l

Good spectral matching to si-photodetector

l

Radiant angle : 25°

Absolute Maximum Ratings

Parameter

Maximum Rating

Unit

Power Dissipation

120

mW

Peak Forward Current(300pps,10

µs pulse)

1

A

Continuos Forward Current

100

mA

Reverse Voltage

5

V

Operating Temperature Range

-55

Storage Temperature Range

-55

Lead Soldering Temperature

260

11/17/2000

Notes :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package

@ T

Unite: mm ( inches )

Unity Opto Technology Co., Ltd.

7.62

(.300)

1.00

(.040)

.50 TYP.

(.020)

23.4 0MIN.

(.920)

1.00MIN

(.040)

A

C

φ5.05

(.200)

FLAT DENOTES CATHODE

5.90

(.230)

5.47

(.215)

2.54

(.100)