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BTA1952I3 Datasheet(PDF) 1 Page - Cystech Electonics Corp. |
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BTA1952I3 Datasheet(HTML) 1 Page - Cystech Electonics Corp. |
1 / 5 page CYStech Electronics Corp. Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 BTA1952I3 CYStek Product Specification Low Vcesat PNP Epitaxial Planar Transistor BVCEO -100V BTA1952I3 IC -5A RCESAT 150mΩ Features • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103I3 • RoHS compliant package Symbol Outline BTA1952I3 TO-251 B C B:Base C:Collector E:Emitter B C E Absolute Maximum Ratings (Ta=25 °C) Parameter Symbol Limits Unit Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V IC(DC) -5 Collector Current IC(Pulse) -10 *1 A Pd(TA=25℃) 1 Power Dissipation Pd(TC=25℃) 25 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~+150 °C Note : *1 . Single Pulse Pw=10ms |
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