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MICROSDHC Datasheet(PDF) 3 Page - Transcend Information. Inc. |
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MICROSDHC Datasheet(HTML) 3 Page - Transcend Information. Inc. |
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m m miiic c cr rro o oS S SD D DH H HC C C C C Ca a ar rrd d d s s se e er rriiie e es s s High Capacity microSD Card Transcend Information Inc. 3 Bus Operating Conditions • General Parameter Symbol Min. Max. Unit Remark Peak voltage on all lines -0.3 VDD+0.3 V All Inputs Input Leakage Current -10 10 µA All Outputs Output Leakage Current -10 10 µA • Power Supply Voltage Parameter Symbol Min. Max. Unit Remark Supply voltage VDD 2.7 3.6 V Output High Voltage VOH 0.75* VDD V IOH=-100uA@VDD Min. Output Low Voltage VOL 0.125* VDD V IOL=100uA@VDD Min. Input High Voltage VIH 0.625* VDD VDD+0.3 V Input Low Voltage VIL VSS-0.3 0.25* VDD V Power up time 250 ms From 0v to VDD Min. • Current Consumption The current consumption is measured by averaging over 1 second. ‧ Before first command: Maximum 15 mA ‧ During initialization: Maximum 100 mA ‧ Operation in Default Mode: Maximum 100 mA ‧ Operation in High Speed Mode: Maximum 200 mA ‧ Operation with other functions: Maximum 500 mA. • Bus Signal Line Load The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance C US B C itself and the capacitance CCARD of each card connected to this line: L = CHOST + CBUS + Ν*CCARD Where N is the number of connected cards. Parameter Symbol Min. Max. Unit Remark Pull-up resistance RCMD RDAT 10 100 k Ω To prevent bus floating Bus signal line capacitance CL 40 pF 1 card CHOST+CBUS shall not exceed 30 pF |
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