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1PS79SB70 Datasheet(PDF) 5 Page - NXP Semiconductors |
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1PS79SB70 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 20 page BAS70_1PS7XSB70_SER_9 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 09 — 13 January 2010 5 of 20 NXP Semiconductors BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values [1] Tj =25 °C prior to surge. Table 5. Marking codes Type number Marking code[1] Type number Marking code[1] 1PS76SB70 S2 BAS70-05W 75* 1PS79SB70 G BAS70-06 76* BAS70 73* BAS70-06W 76* BAS70H AH BAS70-07 77* BAS70L S8 BAS70-07S 77* BAS70W 73* BAS70-07V 77 BAS70-04 74* BAS70VV N1 BAS70-04W 74* BAS70XY 70* BAS70-05 75* - - Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode VR reverse voltage - 70 V IF forward current - 70 mA IFRM repetitive peak forward current tp ≤ 1s; δ≤ 0.5 - 70 mA IFSM non-repetitive peak forward current tp ≤ 10 ms [1] -100 mA Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
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