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TLP3520A Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP3520A Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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TLP3520A 2002-09-25 3 Individual Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 µA Capacitance CT V = 0, f = 1 MHz ― 30 ― pF Peak off -state current IDRM VDRM = 400 V, Ta = 110°C ― ― 100 µA Peak on -state voltage VTM ITM = 1.5 A ― ― 3.0 V Holding current IH RL = 100Ω ― ― 25 mA Critical rate of rise of off -state voltage dv / dt Vin = 120 Vrms (Fig.1) 200 500 ― V / µs Critical rate of rise of commutating voltage dv / dt (c) Vin = 120 Vrms, IT = 1.0 Arms (Fig.1) ― 5 ― V / µs Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Trigger LED current IFT VT = 6 V ― ― 10 mA Capacitance (input to output) CS VS = 0, f = 1 MHz ― 1.5 ― pF Isolation resistance RS VS = 500 V 5×10 10 10 14 ― Ω AC, 1 minute 2500 ― ― AC, 1 second, in oil ― 5000 ― Vrms Isolation voltage BVS DC, 1 minute, in oil ― 5000 ― Vdc Fig.1: dv / dt test circuit dv / dt(c) 5V,VCC 0V Vin VCC RL 2 3 15 11 9 Rin 120Ω dv / dt + - 13 |
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