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TLP3520A Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TLP3520A Datasheet(HTML) 2 Page - Toshiba Semiconductor |
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TLP3520A 2002-09-25 2 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current derating (Ta ≥ 53°C) ∆IF / °C -0.7 mA / °C Peak forward current (100 µs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Off -state output terminal voltage VDRM 400 V Ta = 40°C 1.2 On -state RMS current Ta = 60°C IT(RMS) 0.9 A On -state current derating (Ta ≥ 40°C) ∆IT / °C -15 mA / °C Peak current from snubber circuit (100µs pulse, 120 pps) ISP 2 A Peak nonrepetitive surge current (50 Hz, peak) ITSM 10 A Junction temperature Tj 120 °C Storage temperature range Tstg -40~125 °C Operating temperature range Topr -20~80 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 min., R.H.≤ 60%) (Note) BVS 2500 Vrms (Note)Device considered a two terminal: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VAC ― ― 120 Vac Forward current IF 15 20 25 mA Peak current from snubber circuit ISP ― ― 1 A Operating temperature Topr -20 ― 80 °C |
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