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SKM50GB12T4 Datasheet(PDF) 1 Page - Semikron International |
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SKM50GB12T4 Datasheet(HTML) 1 Page - Semikron International |
1 / 5 page SKM50GB12T4 © by SEMIKRON Rev. 0 – 19.02.2009 1 SEMITRANS®2 GB Fast IGBT4 Modules SKM50GB12T4 Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperature coefficient • High short circuit capability, self limiting to 6 x ICNOM • Soft switching 4. Generation CAL diode (CAL4) Typical Applications • AC inverter drives •UPS • Electronic welders at fsw up to 20 kHz Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES 1200 V IC Tj = 175 °C Tc =25°C 81 A Tc =80°C 62 A ICnom 50 A ICRM ICRM = 3xICnom 150 A VGES -20 ... 20 V tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 10 µs Tj -40 ... 175 °C Inverse diode IF Tj = 175 °C Tc =25°C 65 A Tc =80°C 49 A IFnom 50 A IFRM IFRM = 3xIFnom 150 A IFSM tp = 10 ms, sin 180°, Tj =25°C 270 A Tj -40 ... 175 °C Module It(RMS) 200 A Tstg -40 ... 125 °C Visol AC sinus 50Hz, t = 1 min 4000 V Characteristics Symbol Conditions min. typ. max. Unit IGBT VCE(sat) IC =50 A VGE =15V chiplevel Tj =25°C 1.85 2.1 V Tj = 150 °C 2.2 2.4 V VCE0 Tj =25°C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE VGE =15V Tj =25°C 21.0 24.0 mΩ Tj = 150 °C 30.0 32.0 mΩ VGE(th) VGE=VCE, IC =1.7 mA 5 5.8 6.5 V ICES VGE =0V VCE = 1200 V Tj =25°C 0.1 0.3 mA Tj = 150 °C mA Cies VCE =25 V VGE =0V f=1MHz 2.77 nF Coes f=1MHz 0.20 nF Cres f=1MHz 0.16 nF QG VGE =- 8 V...+ 15 V 280 nC RGint Tj =25°C 4.0 Ω td(on) VCC = 600 V IC =50 A VGE =±15 V RG on =8.2 Ω RG off =8.2 Ω di/dton = 1700 A/µs di/dtoff = 670 A/µs Tj = 150 °C 98 ns tr Tj = 150 °C 29 ns Eon Tj = 150 °C 5.5 mJ td(off) Tj = 150 °C 325 ns tf Tj = 150 °C 75 ns Eoff Tj = 150 °C 4.5 mJ Rth(j-c) per IGBT 0.53 K/W |
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Similar Description - SKM50GB12T4_09 |
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