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SEMIX453GAL12E4S Datasheet(PDF) 2 Page - Semikron International |
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SEMIX453GAL12E4S Datasheet(HTML) 2 Page - Semikron International |
2 / 6 page SEMiX453GAL12E4s 2 Rev. 4 – 16.12.2009 © by SEMIKRON td(on) VCC = 600 V IC =450 A RG on =1.9 Ω RG off =1.9 Ω di/dton = 4000 A/µs di/dtoff = 5000 A/µs Tj = 150 °C 336 ns tr Tj = 150 °C 80 ns Eon Tj = 150 °C 45 mJ td(off) Tj = 150 °C 615 ns tf Tj = 150 °C 130 ns Eoff Tj = 150 °C 66.5 mJ Rth(j-c) per IGBT 0.065 K/W Inverse diode VF = VEC IF =450 A VGE =0V chip Tj =25°C 2.1 2.46 V Tj = 150 °C 2.1 2.4 V VF0 Tj =25°C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V rF Tj =25°C 1.4 1.9 2.1 mΩ Tj = 150 °C 2.2 2.6 2.8 mΩ IRRM IF =450 A di/dtoff = 5000 A/µs VGE =-15 V VCC = 600 V Tj = 150 °C 350 A Qrr Tj = 150 °C 70 µC Err Tj = 150 °C 28 mJ Rth(j-c) per diode 0.11 K/W Freewheeling diode VF = VEC IF =450 A VGE =0V chip Tj =25°C 2.1 2.5 V Tj = 150 °C 2.1 2.4 V VF0 Tj =25°C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V rF Tj =25°C 1.4 1.9 2.1 mΩ Tj = 150 °C 2.2 2.6 2.8 mΩ IRRM IF =450 A di/dtoff = 5000 A/µs VGE =-15 V VCC = 600 V Tj = 150 °C 350 A Qrr Tj = 150 °C 70 µC Err Tj = 150 °C 28 mJ Rth(j-c) per diode 0.11 K/W Module LCE 20 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 mΩ TC = 125 °C 1mΩ Rth(c-s) per module 0.04 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) 493 ± 5% Ω B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K Characteristics Symbol Conditions min. typ. max. Unit SEMiX® 3s GAL Trench IGBT Modules SEMiX453GAL12E4s Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives •UPS • Electronic Welding Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C • Dynamic values apply to the following combination of resistors: RGon,main = 1,0 Ω RGoff,main = 1,0 Ω RG,X = 2,2 Ω RE,X = 0,5 Ω |
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