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SEMIX452GAR126HDS Datasheet(PDF) 2 Page - Semikron International

Part # SEMIX452GAR126HDS
Description  Trench IGBT Modules
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Manufacturer  SEMIKRON [Semikron International]
Direct Link  http://www.semikron.com
Logo SEMIKRON - Semikron International

SEMIX452GAR126HDS Datasheet(HTML) 2 Page - Semikron International

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SEMiX452GAR126HDs
2
Rev. 13 – 02.12.2008
© by SEMIKRON
td(on)
VCC = 600 V
IC =300 A
Tj = 125 °C
RG on =2 Ω
RG off =2 Ω
280
ns
tr
65
ns
Eon
35
mJ
td(off)
630
ns
tf
130
ns
Eoff
45
mJ
Rth(j-c)
per IGBT
0.083
K/W
Rth(j-s)
per IGBT
K/W
Inverse diode
VF = VEC
IF =300 A
VGE =0V
chiplevel
Tj =25°C
1.6
1.8
V
Tj = 125 °C
1.6
1.8
V
VF0
Tj =25°C
0.9
1
1.1
V
Tj = 125 °C
0.7
0.8
0.9
V
rF
Tj =25°C
1.7
2.0
2.3
mΩ
Tj = 125 °C
2.3
2.7
3.0
mΩ
IRRM
IF =300 A
di/dtoff = 6200 A/µs
VGE =-15 V
VCC = 600 V
Tj = 125 °C
375
A
Qrr
Tj = 125 °C
75
µC
Err
Tj = 125 °C
33
mJ
Rth(j-c)
per diode
0.15
K/W
Rth(j-s)
per diode
K/W
Freewheeling diode
VF = VEC
IF =300 A
VGE =0V
chiplevel
Tj =25°C
1.6
1.8
V
Tj = 125 °C
1.6
1.8
V
VF0
Tj =25°C
0.9
1
1.1
V
Tj = 125 °C
0.7
0.8
0.9
V
rF
Tj =25°C
1.7
2.0
2.3
mΩ
Tj = 125 °C
2.3
2.7
3.0
mΩ
IRRM
IF =300 A
di/dtoff = 6200 A/µs
VGE =-15 V
VCC = 600 V
Tj = 125 °C
375
A
Qrr
Tj = 125 °C
75
µC
Err
Tj = 125 °C
33
mJ
Rth(j-c)
per diode
0.15
K/W
Rth(j-s)
per diode
K/W
Module
LCE
18
nH
RCC'+EE'
res., terminal-chip
TC =25°C
0.7
mΩ
TC = 125 °C
1mΩ
Rth(c-s)
per module
0.045
K/W
Ms
to heat sink (M5)
3
5
Nm
Mt
to terminals (M6)
2.5
5
Nm
Nm
w
250
g
Temperature sensor
R100
Tc=100°C (R25=5 kΩ)
0,493
±5%
kΩ
B100/125
R(T)=R100exp[B100/125(1/T-1/T100)];
T[K];
3550
±2%
K
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
SEMiX®2s
GAR
Trench IGBT Modules
SEMiX452GAR126HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
•VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
•UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design


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