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SEMIX452GAR126HDS Datasheet(PDF) 2 Page - Semikron International |
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SEMIX452GAR126HDS Datasheet(HTML) 2 Page - Semikron International |
2 / 5 page SEMiX452GAR126HDs 2 Rev. 13 – 02.12.2008 © by SEMIKRON td(on) VCC = 600 V IC =300 A Tj = 125 °C RG on =2 Ω RG off =2 Ω 280 ns tr 65 ns Eon 35 mJ td(off) 630 ns tf 130 ns Eoff 45 mJ Rth(j-c) per IGBT 0.083 K/W Rth(j-s) per IGBT K/W Inverse diode VF = VEC IF =300 A VGE =0V chiplevel Tj =25°C 1.6 1.8 V Tj = 125 °C 1.6 1.8 V VF0 Tj =25°C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V rF Tj =25°C 1.7 2.0 2.3 mΩ Tj = 125 °C 2.3 2.7 3.0 mΩ IRRM IF =300 A di/dtoff = 6200 A/µs VGE =-15 V VCC = 600 V Tj = 125 °C 375 A Qrr Tj = 125 °C 75 µC Err Tj = 125 °C 33 mJ Rth(j-c) per diode 0.15 K/W Rth(j-s) per diode K/W Freewheeling diode VF = VEC IF =300 A VGE =0V chiplevel Tj =25°C 1.6 1.8 V Tj = 125 °C 1.6 1.8 V VF0 Tj =25°C 0.9 1 1.1 V Tj = 125 °C 0.7 0.8 0.9 V rF Tj =25°C 1.7 2.0 2.3 mΩ Tj = 125 °C 2.3 2.7 3.0 mΩ IRRM IF =300 A di/dtoff = 6200 A/µs VGE =-15 V VCC = 600 V Tj = 125 °C 375 A Qrr Tj = 125 °C 75 µC Err Tj = 125 °C 33 mJ Rth(j-c) per diode 0.15 K/W Rth(j-s) per diode K/W Module LCE 18 nH RCC'+EE' res., terminal-chip TC =25°C 0.7 mΩ TC = 125 °C 1mΩ Rth(c-s) per module 0.045 K/W Ms to heat sink (M5) 3 5 Nm Mt to terminals (M6) 2.5 5 Nm Nm w 250 g Temperature sensor R100 Tc=100°C (R25=5 kΩ) 0,493 ±5% kΩ B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 3550 ±2% K Characteristics Symbol Conditions min. typ. max. Unit SEMiX®2s GAR Trench IGBT Modules SEMiX452GAR126HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology •VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives •UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design |
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