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150U80 Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

Part No. 150U80
Description  SILICON POWER DIODE
Download  1 Pages
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Maker  NAINA [Naina Semiconductor ltd.]
Homepage  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

150U80 Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

  150U80 Datasheet HTML 1Page - Naina Semiconductor ltd.  
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NAINA
FEATURES
• Diffused Series
• Available in Normal & Reverse Polarity
• Industrial Grade
• Available In Avalanche Characteristic
ELECTRICALSPECIFICATIONS
I
F
Maximum Average Forward
150A
Current Te=1250C
VFM
Maximum peak forward
1.4V
voltage drop @ Rated IF(AV)
I
FSM
Maximum peak one cycle
3000A
(non-rep) surge current 10 m sec
I
FRM
Maximum peak repetitive
750A
surge current
I2t
Maximum I2t rating (non-rep.) for
45,000 A2 Sec
5 to 10 msec.
150U/150UR
SILICON POWER DIODE
THERMAL MECHANICAL SPECIFICATIONS
θθθθθ
JC
Maximum thermal resistance Junction to case
0.250C/W
Tj
Operating Junction Temp.
-650C to 1500C
Tstg
Storage temperature
-650C to 2000C
Mounting torque
2.0 M-kg min,
(Non-lubricated threads)
3.0 M-kg max
W
Approx, weight
150 gms.
ELECTRICALRATINGS
TYPE
150U/150UR
10
20
40
60
80
100
120
140
160
VRRM
Max. repetitive peak reverse
100
200
400
600
800
1000
1200
1400 1600
voltage (v)
VR(RMS) Max. R.M.S. reverse voltage (V)
70
140
280
420
560
700
840
980 1120
VR
Max. D.C. Blocking Voltage (V)
100
200
400
600
800
1000
1200
1400 1600
Recommended R.M.S. working
40
80
160
240
320
400
480
560
640
Voltage(v)
IR(AV)
Max. Average reverse leakage
200
200
200
200
200
200
200
200
200
current @ VRRM Tc 250C (uA)
NAINA SEMICONDUCTOR LTD.,
D-95,SECTOR 63, NOIDA(INDIA)
e-mail:sales@nainasemi.com, web site: www.nainasemi.com
DO - 8


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