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150U80 Datasheet(PDF) 1 Page - Naina Semiconductor ltd. |
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150U80 Datasheet(HTML) 1 Page - Naina Semiconductor ltd. |
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1 / 1 page  NAINA FEATURES • Diffused Series • Available in Normal & Reverse Polarity • Industrial Grade • Available In Avalanche Characteristic ELECTRICALSPECIFICATIONS I F Maximum Average Forward 150A Current Te=1250C VFM Maximum peak forward 1.4V voltage drop @ Rated IF(AV) I FSM Maximum peak one cycle 3000A (non-rep) surge current 10 m sec I FRM Maximum peak repetitive 750A surge current I2t Maximum I2t rating (non-rep.) for 45,000 A2 Sec 5 to 10 msec. 150U/150UR SILICON POWER DIODE THERMAL MECHANICAL SPECIFICATIONS θθθθθ JC Maximum thermal resistance Junction to case 0.250C/W Tj Operating Junction Temp. -650C to 1500C Tstg Storage temperature -650C to 2000C Mounting torque 2.0 M-kg min, (Non-lubricated threads) 3.0 M-kg max W Approx, weight 150 gms. ELECTRICALRATINGS TYPE 150U/150UR 10 20 40 60 80 100 120 140 160 VRRM Max. repetitive peak reverse 100 200 400 600 800 1000 1200 1400 1600 voltage (v) VR(RMS) Max. R.M.S. reverse voltage (V) 70 140 280 420 560 700 840 980 1120 VR Max. D.C. Blocking Voltage (V) 100 200 400 600 800 1000 1200 1400 1600 Recommended R.M.S. working 40 80 160 240 320 400 480 560 640 Voltage(v) IR(AV) Max. Average reverse leakage 200 200 200 200 200 200 200 200 200 current @ VRRM Tc 250C (uA) NAINA SEMICONDUCTOR LTD., D-95,SECTOR 63, NOIDA(INDIA) e-mail:sales@nainasemi.com, web site: www.nainasemi.com DO - 8 |
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