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CDBF54-HF Datasheet(PDF) 1 Page - Comchip Technology |
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CDBF54-HF Datasheet(HTML) 1 Page - Comchip Technology |
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1 / 4 page  SMD Schottky Barrier Diode Page 1 QW-G1019 Io = 200 mA VR = 30 Volts CDBF54-HF Features Low forward Voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Mounting position: Any Weight: 0.006 gram(approx.). Halogen free. Marking code: cathode band & BF REV:A 0.102(2.60) 0.095(2.40) 0.020(0.50) Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 1005(2512) 0.012 (0.30) Typ. 0.040(1.00) Typ. SMD Diodes Specialist (RoHS Device) O Electrical Characteristics (at TA=25 C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Forward voltage IF = 1mA IF = 0.1mA IF = 10mA IF = 30mA IF = 100mA VF V 0.32 0.24 0.4 0.5 1 Reverse current IR uA VR = 25V Capacitance between terminals Reverse recovery time f = 1 MHz, and 1 VDC reverse voltage IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm CT Trr pF nS 5 10 2 O Maximum Rating (at TA=25 C unless otherwise noted) Typ IO IFSM VR(RMS) VR VRM IFRM Repetitive peak forward current Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Parameter Conditions Min Max Unit RMS reverse voltage 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) A A mA V V V 0.6 0.3 200 21 30 30 PD Power dissipation mW 200 OC +125 TSTG Tj Storage temperature Junction temperature OC +125 -65 Comchip Technology CO., LTD. Comchip Technology CO., LTD. |
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Similar Description - CDBF54-HF |
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