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BUX80 Datasheet(PDF) 1 Page - Comset Semiconductor

Part No. BUX80
Description  HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR
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Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
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BUX80 Datasheet(HTML) 1 Page - Comset Semiconductor

   
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NPN BUX80
COMSET SEMICONDUCTORS
1/2
The BUX80 is silicon multiepitaxial planar NPN transistor in Jedec TO-3.
They are intended for use in converters, inverters, switching regulators and motor control systems
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage
IB = 0
400
V
VCER
Collector- Emitter Voltage
RBE = 50Ω
500
V
VEBO
Emitter-Base Voltage
IC = 0
10
V
VCES
Collector-Emitter Voltage
VBE = 0
800
V
IC
Collector Current
10
A
ICM
Collector Peak Current
tp = 10ms
15
A
IB
Base Current
5
A
Pt
Total Power Dissipation
@ TC = 40°
100
Watts
TJ
Junction Temperature
150
°C
TStg
Storage Temperature
-65 to +150
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJC
Thermal Resistance, Junction to Case
1.1
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
VCEO(SUS)
Collector-Emitter
Sustaining Voltage (1)
IC=100 mA
400
-
-
V
VCER
Collector-Emitter
Sustaining Voltage (1)
IC=100 mA , RBE = 50Ω
500
-
-
V
IEBO
Emitter Cutoff Current
VCE=10 V , IC=0
-
-
10
mA
VCE= VCES , VBE= 0
-
-
1
ICES
Collector Cutoff Current
VCE= VCES , VBE= 0, Tcase = 125°C
-
-
3
mA
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