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2N2907 Datasheet(PDF) 2 Page - Comset Semiconductor

Part No. 2N2907
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
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Maker  COMSET [Comset Semiconductor]
Homepage  http://comset.halfin.com
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2N2907 Datasheet(HTML) 2 Page - Comset Semiconductor

   
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NPN 2N2222 – 2N2222A
PNP 2N2907 – 2N2907A
COMSET SEMICONDUCTORS
3
/3
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
VCB=60 V, IE=0V
2N2222A
ICBO
Collector Cutoff Current
VCB=50 V, IE=0V
2N2222
-
-
10
nA
VCB=60 V, IE=0V, Tj=150°C
2N2222A
ICBO
Collector Cutoff Current
VCB=50 V, IE=0V, Tj=150°C
2N2222
-
-
10
µA
2N2222A
IEBO
Emitter Cutoff Current
VBE=3.0 V, IC=0
2N2222
-
-
10
nA
2N2222A
ICEX
Collector Cutoff Current
VCE=60 V, -VBE=3V
2N2222
-
-
10
nA
2N2222A
40
-
-
VCEO
Collector Emitter Breakdown
Voltage
IC=10 mA, IB=0
2N2222
30
-
-
V
2N2222A
75
-
-
VCBO
Collector Base Breakdown
Voltage
IC=10 µA, IE=0
2N2222
60
-
-
V
2N2222A
6
-
-
VEBO
Emitter Base Breakdown
Voltage
IE=10 µA, IC=0
2N2222
5
-
-
V
2N2222A
IC=0.1 mA, VCE=10 V
2N2222
35
-
-
2N2222A
IC=1 mA, VCE=10 V
2N2222
50
-
-
2N2222A
IC=10 mA, VCE=10 V
2N2222
75
-
-
2N2222A
35
-
-
IC=10 mA, VCE=10 V
Tamb = -55°
2N2222
-
-
-
2N2222A
IC=150 mA, VCE=1 V (1)
2N2222
50
-
-
2N2222A
IC=150 mA, VCE=10 V (1)
2N2222
100
-
-
2N2222A
40
-
-
hFE
DC Current Gain
IC=500 mA, VCE=10 V (1)
2N2222
30
-
-
-
2N2222A
-
-
0.3
IC=150 mA, IB=15 mA
2N2222
-
-
0.4
2N2222A
-
-
1
VCE(SAT)
Collector-Emitter saturation
Voltage (1)
IC=500 mA, IB=50 mA
2N2222
-
-
1.6
2N2222A
-
-
1.2
IC=150 mA, IB=15 mA
2N2222
-
-
1.3
2N2222A
-
-
2
VBE(SAT)
Base-Emitter saturation
Voltage (1)
IC=500 mA, IB=50 mA
2N2222
-
-
2.6
V
Symbol
Ratings
Test Condition(s)
Min Typ Mx
Unit
2N2222A
250
-
-
fT
Transition frequency
IC=20 mA, VCE=20 V
f= 100MHz
2N2222
300
-
-
MHz
2N2222A
3
-
-
hfe
Small signal current gain
IC=1 A, VCE=2.0 V
2N2222
2.5
-
-
-


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