TC58FVB641 datasheet(6/53 Pages) TOSHIBA

Part #	TC58FVB641

Description	64-MBIT (8M 횞 8 BITS / 4M 횞 16 BITS) CMOS FLASH MEMORY

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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6 / 53 page

TC58FVT641/B641FT/XB-70,-10

2001-09-06

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SIMULTANEOUS READ/WRITE OPERATION

The TC58FVT641/B641 features a Simultaneous Read/Write operation. The Simultaneous Read/Write operation

enables the device to simultaneously write data to or erase data from a bank while reading data from another bank.

The TC58FVT641/B641 has a total of seventeen banks: 1 bank of 0.5 Mbits, 1 bank of 3.5 Mbits and 15 banks of 4

Mbits. Banks can be switched between using the bank addresses (A21~A15). For a description of bank blocks and

addresses, please refer to the Block Address Table and Block Size Table.

The Simultaneous Read/Write operation cannot perform multiple operations within a single bank. The table

below shows the operation modes in which simultaneous operation can be performed.

Note that during Auto-Program execution or Auto Block Erase operation, the Simultaneous Read/Write operation

cannot read data from addresses in the same bank which have not been selected for operation. Data from these

addresses can be read using the Program Suspend or Erase Suspend function, however.

SIMULTANEOUS READ/WRITE OPERATION

STATUS OF BANK ON WHICH OPERATION IS BEING

PERFORMED

STATUS OF OTHER BANKS

Read Mode

ID Read Mode

(1)

Auto-Program Mode

Fast Program Mode

(2)

Program Suspend Mode

Auto Block Erase Mode

Auto Multiple Block Erase Mode

(3)

Erase Suspend Mode

Program Suspend during Erase Suspend

CFI Mode

Read Mode

(1) Only Command Mode is valid.

(2) Including times when Acceleration Mode is in use.

(3) If the selected blocks are spread across all nine banks, simultaneous operation cannot be carried out.

OPERATION MODES

In addition to the Read, Write and Erase Modes, the TC58FVT641/B641 features many functions including block

protection and data polling. When incorporating the device into a deign, please refer to the timing charts and

flowcharts in combination with the description below.

READ MODE

To read data from the memory cell array, set the device to Read Mode. In Read Mode the device can perform

high-speed random access as asynchronous ROM.

The device is automatically set to Read Mode immediately after power-on or on completion of automatic

operation. A software reset releases ID Read Mode and the lock state which the device enters if automatic

operation ends abnormally, and sets the device to Read Mode. A hardware reset terminates operation of the

device and resets it to Read Mode. When reading data without changing the address immediately after

power-on, either input a hardware Reset or change CE from H to L.

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TC58FVB641 Datasheet(PDF) 6 Page - Toshiba Semiconductor

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