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FK14SM-12 Datasheet(PDF) 5 Page - Mitsubishi Electric Semiconductor

Part No. FK14SM-12
Description  HIGH-SPEED SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FK14SM-12 Datasheet(HTML) 5 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14SM-12
HIGH-SPEED SWITCHING USE
10–4
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
23 57
23 57
23 57
23 57100 23 57101 23 57102
10–3
10–2
10–1
10–2
PDM
tw
D=
T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
1.4
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
VGS = 0V
ID = 1mA
103
7
5
3
2
100
23
5 7 101
102
7
5
3
2
23
5 7 102
101
102
7
5
3
2
101
7
5
3
2
100
dis/dt = –100A /
µs
VGS = 0V
VDD = 250V
Irr
trr
Tch = 25°C
Tch = 150°C
101
23
5 7 102
23
5 7 103
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
100
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
IS = 14A
VGS = 0V
VDD = 250V
Tch = 25°C
Tch = 150°C
Irr
trr
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
SOURCE CURRENT IS (A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
SOURCE CURRENT dis/dt (–A/
µs)
DIODE REVERSE VS.
SOURCE CURRENT dis/dt CHARACTERISTIC
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH tw (s)


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