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FK14SM-12 Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

Part No. FK14SM-12
Description  HIGH-SPEED SWITCHING USE
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Manufacturer  MITSUBISHI [Mitsubishi Electric Semiconductor]
Direct Link  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FK14SM-12 Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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Feb.1999
MITSUBISHI Nch POWER MOSFET
FK14SM-12
HIGH-SPEED SWITCHING USE
100
7
5
3
2
10–1
0
101
7
5
3
2
50
100
150
200
250
VGS = 10V
ID = 1/2ID
Pulse Test
20
16
12
8
4
0
0
20406080
100
200V
400V
VDS = 100V
Tch = 25°C
ID = 14A
23 5 7 102
103
7
5
3
2
102
7
5
3
2
101
5
3
2
23 5 7 101
23 5 7 100
23
Tch = 25°C
f = 1MHz
VGS = 0V
Ciss
Coss
Crss
23
5 7 101
103
7
5
3
2
102
7
5
3
2
23
5 7 102
100
101
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50
tf
td(off)
tr
td(on)
5.0
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
VDS = 10V
ID = 1mA
50
40
30
20
10
0
0
0.8
1.6
2.4
3.2
4.0
25°C
VGS = 0V
Pulse Test
TC=125°C
75°C
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Qg (nC)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE VSD (V)
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
CHANNEL TEMPERATURE Tch (°C)


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