LY6125616

Rev. 2.1

5V 256K X 16 BIT HIGH SPEED CMOS SRAM

5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.

TEL: 886-3-6668838

FAX: 886-3-6668836

3

®

PIN CONFIGURATION

A1

A2

A3

A4

DQ15

DQ0

DQ1

DQ2

Vcc

Vss

A12

A17

DQ14

DQ12

DQ13

DQ11

Vss

Vcc

DQ10

DQ9

DQ3

DQ4

TSOP II

28

14

13

12

11

10

9

8

7

6

5

4

3

2

1

17

16

15

20

19

18

22

23

24

25

26

27

21

A16

A0

DQ6

DQ7

A5

A6

A7

A8

A9

DQ5

DQ8

A15

A14

A13

A10

NC

34

29

30

31

32

33

44

39

40

41

42

43

35

36

37

38

A11

CE#

WE#

LB#

UB#

OE#

ABSOLUTE MAXIMUN RATINGS*

PARAMETER

SYMBOL

RATING

UNIT

-0.5 to 6.5

V

V

0 to 70(C grade)

-20 to 80(E grade)

Operating Temperature

-40 to 85(I grade)

℃

Storage Temperature

-65 to 150

℃

Power Dissipation

1

W

DC Output Current

50

mA

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.